| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 6A04-G | COMCHIP TECHNOLOGY CORP | Standard | 400V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | - | 10°C/W Ja | -55°C ~ 125°C | Through Hole | P600, Axial | |
| P600B-E3/54 | VISHAY SEMICONDUCTORS | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 100V | 150pF @ 4V, 1MHz | 20°C/W Ja | -55°C ~ 150°C | Through Hole | P600, Axial | |
| P600K-E3/54 | VISHAY SEMICONDUCTORS | Standard | 800V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 800V | 150pF @ 4V, 1MHz | 20°C/W Ja | -55°C ~ 150°C | Through Hole | P600, Axial | |
| GI751-E3/54 | VISHAY SEMICONDUCTORS | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 100V | 150pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | P600, Axial | |
| GI758-E3/54 | VISHAY SEMICONDUCTORS | Standard | 800V | 6A | 950mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 800V | 150pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | P600, Axial | |
| GI750-E3/54 | VISHAY SEMICONDUCTORS | Standard | 50V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 50V | 150pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | P600, Axial | |
| GI752-E3/54 | VISHAY SEMICONDUCTORS | Standard | 200V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 200V | 150pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | P600, Axial | |
| GI754-E3/54 | VISHAY SEMICONDUCTORS | Standard | 400V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 400V | 150pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | P600, Axial | |
| P600D-E3/54 | VISHAY SEMICONDUCTORS | Standard | 200V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 200V | 150pF @ 4V, 1MHz | 20°C/W Ja | -55°C ~ 150°C | Through Hole | P600, Axial | |
| P600D-E3/73 | VISHAY SEMICONDUCTORS | Standard | 200V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 200V | 150pF @ 4V, 1MHz | 20°C/W Ja | -55°C ~ 150°C | Through Hole | P600, Axial |
© 2016 Copyright
