| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N6630US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 900V | - | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 4µA @ 100V | - | 6.5°C/W Jc | -65°C ~ 150°C | Surface Mount | E-MELF | |
| 1N6078US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 150V | 6A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | 13°C/W Jc | -65°C ~ 155°C | Surface Mount | E-MELF | |
| JAN1N6642US | MICROSEMI CORP | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 40pF @ 0V, 1MHz | 250°C/W Ja | -65°C ~ 175°C | Surface Mount | E-MELF |
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