12A (DC),Current - Average Rectified (Io)
175°C (Max),Operating Temperature - Junction
3 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
SCS212AGC ROHM CO LTD
Silicon Carbide Schottky 650V 12A (DC) 1.55V @ 12A No Recovery Time > 500mA (Io) 0ns 240µA @ 600V 438pF @ 1V, 1MHz 1.6°C/W Jc 175°C (Max) Through Hole TO-220-2
TRS12E65C,S1Q TOSHIBA CORP
Silicon Carbide Schottky 650V 12A (DC) 1.7V @ 12A Fast Recovery =< 500ns, > 200mA (Io) - 90µA @ 170V 65pF @ 650V, 1MHz 1.9°C/W Jc 175°C (Max) Through Hole TO-220-2
TRS12N65D,S1F TOSHIBA CORP
1 Pair Common Cathode 650V 12A (DC) 1.7V @ 12A - - 90µA @ 650V 35pF @ 650V, 1MHz 1.15°C/W Jc 175°C (Max) - -