EGP30A |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
50V
|
3A
|
950mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 50V
|
95pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
EGP30B |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
100V
|
3A
|
950mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 100V
|
95pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
EGP30D |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
200V
|
3A
|
950mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 200V
|
95pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
EGP30C |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
150V
|
3A
|
950mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 150V
|
95pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
EGP50C-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
150V
|
5A
|
950mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 150V
|
95pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AA, DO-27, Axial
|
EGP50A-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
50V
|
5A
|
950mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 50V
|
95pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AA, DO-27, Axial
|
EGP50A-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
50V
|
5A
|
950mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 50V
|
95pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AA, DO-27, Axial
|
EGP50B-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
100V
|
5A
|
950mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 100V
|
95pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AA, DO-27, Axial
|
EGP50C-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
150V
|
5A
|
950mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 150V
|
95pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AA, DO-27, Axial
|
EGP50D-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
200V
|
5A
|
950mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 200V
|
95pF @ 4V, 1MHz
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AA, DO-27, Axial
|