Standard,Diode Type
300pF @ 4V, 1MHz,Capacitance @ Vr, F
7 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
GI820-E3/54 VISHAY SEMICONDUCTORS
Standard 50V 5A 1.1V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 200ns 10µA @ 50V 300pF @ 4V, 1MHz 10°C/W Ja -50°C ~ 150°C Through Hole P600, Axial
GI822-E3/54 VISHAY SEMICONDUCTORS
Standard 200V 5A 1.1V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 200ns 10µA @ 200V 300pF @ 4V, 1MHz 10°C/W Ja -50°C ~ 150°C Through Hole P600, Axial
GI822-E3/73 VISHAY SEMICONDUCTORS
Standard 200V 5A 1.1V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 200ns 10µA @ 200V 300pF @ 4V, 1MHz 10°C/W Ja -50°C ~ 150°C Through Hole P600, Axial
GI828-E3/54 VISHAY SEMICONDUCTORS
Standard 800V 5A 1.1V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 200ns 10µA @ 800V 300pF @ 4V, 1MHz 10°C/W Ja -50°C ~ 150°C Through Hole P600, Axial
GI826-E3/54 VISHAY SEMICONDUCTORS
Standard 600V 5A 1.1V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 200ns 10µA @ 600V 300pF @ 4V, 1MHz 10°C/W Ja -50°C ~ 150°C Through Hole P600, Axial
GI821-E3/54 VISHAY SEMICONDUCTORS
Standard 100V 5A 1.1V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 200ns 10µA @ 100V 300pF @ 4V, 1MHz 10°C/W Ja -50°C ~ 150°C Through Hole P600, Axial
GI824-E3/54 VISHAY SEMICONDUCTORS
Standard 400V 5A 1.1V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 200ns 10µA @ 400V 300pF @ 4V, 1MHz 10°C/W Ja -50°C ~ 150°C Through Hole P600, Axial