US2JFL-TP |
MICRO COMMERCIAL COMPONENTS |
|
Standard
|
600V
|
2A
|
1.7V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
75ns
|
5µA @ 600V
|
28pF @ 4V, 1MHz
|
30°C/W Jl
|
-65°C ~ 175°C
|
Surface Mount
|
DO-221AC, SMA Flat Leads
|
GI504-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
400V
|
3A
|
1.1V @ 9.4A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
5µA @ 400V
|
28pF @ 4V, 1MHz
|
20°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI501-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
100V
|
3A
|
1.1V @ 9.4A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
5µA @ 100V
|
28pF @ 4V, 1MHz
|
20°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI510-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
1000V (1kV)
|
3A
|
1.1V @ 9.4A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
5µA @ 1000V
|
28pF @ 4V, 1MHz
|
20°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI500-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
50V
|
3A
|
1.1V @ 9.4A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
5µA @ 50V
|
28pF @ 4V, 1MHz
|
20°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI502-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
200V
|
3A
|
1.1V @ 9.4A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
5µA @ 200V
|
28pF @ 4V, 1MHz
|
20°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI506-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
600V
|
3A
|
1.1V @ 9.4A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
5µA @ 600V
|
28pF @ 4V, 1MHz
|
20°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI508-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
800V
|
3A
|
1.1V @ 9.4A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
5µA @ 800V
|
28pF @ 4V, 1MHz
|
20°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI501-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
100V
|
3A
|
1.1V @ 9.4A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
5µA @ 100V
|
28pF @ 4V, 1MHz
|
20°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
BY397P-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
200V
|
3A
|
1.25V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
500ns
|
10µA @ 200V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
-50°C ~ 125°C
|
Through Hole
|
DO-201AD, Axial
|