1N5619 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
600V
|
1A
|
1.6V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
250ns
|
500nA @ 600V
|
25pF @ 12V, 1MHz
|
38°C/W Jl
|
-65°C ~ 175°C
|
Through Hole
|
A, Axial
|
1N4946 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
600V
|
1A
|
1.3V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
250ns
|
1µA @ 600V
|
25pF @ 12V, 1MHz
|
38°C/W Jl
|
-65°C ~ 175°C
|
-
|
-
|
1N5619US |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
600V
|
1A
|
1.6V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
250ns
|
500nA @ 600V
|
25pF @ 12V, 1MHz
|
13°C/W Jl
|
-65°C ~ 175°C
|
-
|
-
|
JANTXV1N5619 |
MICROSEMI CORP |
|
Standard
|
600V
|
1A
|
1.6V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
250ns
|
500nA @ 600V
|
25pF @ 12V, 1MHz
|
38°C/W Jl
|
-65°C ~ 175°C
|
Through Hole
|
A, Axial
|
JANTXV1N4946 |
MICROSEMI CORP |
|
Standard
|
600V
|
1A
|
1.3V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
250ns
|
1µA @ 600V
|
25pF @ 12V, 1MHz
|
38°C/W Jl
|
-65°C ~ 175°C
|
Through Hole
|
A, Axial
|
1N5618GP-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
600V
|
1A
|
1.2V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
500nA @ 600V
|
25pF @ 12V, 1MHz
|
45°C/W Ja
|
-65°C ~ 175°C
|
Through Hole
|
DO-204AC, DO-15, Axial
|
1N5618GPHE3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
600V
|
1A
|
1.2V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
500nA @ 600V
|
25pF @ 12V, 1MHz
|
45°C/W Ja
|
-65°C ~ 175°C
|
Through Hole
|
DO-204AC, DO-15, Axial
|