Standard,Diode Type
150µA @ 600V, Reverse Leakage Current @ Vr
5 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
APT15D60BG MICROSEMI POWER PRODUCTS GROUP
Standard 600V 15A 1.8V @ 15A Fast Recovery =< 500ns, > 200mA (Io) 80ns 150µA @ 600V - 1.35°C/W Jc -55°C ~ 175°C Through Hole, Radial TO-247-3
BYC8-600,127 NXP SEMICONDUCTORS
Standard 600V 8A 2.9V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 52ns 150µA @ 600V - 2.2°C/W Jl 150°C (Max) Through Hole TO-220-2
BYC8X-600,127 NXP SEMICONDUCTORS
Standard 600V 8A 2.9V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 52ns 150µA @ 600V - 4.8°C/W Jh 150°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab
BYC58X-600,127 NXP SEMICONDUCTORS
Standard 600V 8A 3.2V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 12.5ns 150µA @ 600V - 3°C/W Jh 150°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab
BYC8B-600,118 NXP SEMICONDUCTORS
Standard 500V 8A 2.9V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 52ns 150µA @ 600V - 2.2°C/W Jl 150°C (Max) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB