Standard,Diode Type
-,Current - Average Rectified (Io)
Fast Recovery =< 500ns, > 200mA (Io),Speed
10 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
1N6630US MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 900V - - Fast Recovery =< 500ns, > 200mA (Io) - 4µA @ 100V - 6.5°C/W Jc -65°C ~ 150°C Surface Mount E-MELF
JANTX1N4500 MICROSEMI CORP
Standard 80V - 1.1V @ 300mA Fast Recovery =< 500ns, > 200mA (Io) 6ns 100nA @ 75V - - -65°C ~ 175°C Through Hole DO-204AH, DO-35, Axial
JAN1N6626 MICROSEMI CORP
Standard 220V - 1.35V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 2µA @ 220V 40pF @ 10V, 1MHz - -65°C ~ 175°C Through Hole E, Axial
JAN1N6627 MICROSEMI CORP
Standard 440V - 1.35V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 2µA @ 440V 40pF @ 10V, 1MHz - -65°C ~ 175°C Through Hole E, Axial
JAN1N6628 MICROSEMI CORP
Standard 660V - 1.35V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 2µA @ 600V - - -65°C ~ 175°C Through Hole E, Axial
JAN1N6629 MICROSEMI CORP
Standard 880V - 1.4V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 50ns 2µA @ 800V - - -65°C ~ 175°C Through Hole E, Axial
JAN1N6631 MICROSEMI CORP
Standard 1100V (1.1kV) - 1.6V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 60ns 2µA @ 1000V - - -65°C ~ 175°C Through Hole E, Axial
BAS16WT1 ON SEMICONDUCTOR
Standard 75V - 1.25V @ 150mA Fast Recovery =< 500ns, > 200mA (Io) 6ns 1µA @ 75V 2pF @ 0V, 1MHz 625°C/W Ja -55°C ~ 150°C Surface Mount SC-70, SOT-323
STTA406 STMICROELECTRONICS
Standard 600V - 1.75V @ 4A Fast Recovery =< 500ns, > 200mA (Io) 55ns 50µA @ 600V - 75°C/W Ja 125°C (Max) Through Hole DO-201AD, Axial
STTA406RL STMICROELECTRONICS
Standard 600V - 1.75V @ 4A Fast Recovery =< 500ns, > 200mA (Io) 55ns 50µA @ 600V - 75°C/W Ja 125°C (Max) Through Hole DO-201AD, Axial