DSK10C |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
1A
|
1.1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
10µA @ 200V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
R-1 (Axial)
|
DSK10E |
ON SEMICONDUCTOR |
|
Standard
|
400V
|
1A
|
1.1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
10µA @ 400V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
R-1 (Axial)
|
DSK10C-AT1 |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
1A
|
1.1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
10µA @ 200V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
R-1 (Axial)
|
DSK10C-BT |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
1A
|
1.1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
10µA @ 200V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
R-1 (Axial)
|
DSK10C-ET1 |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
1A
|
1.1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
10µA @ 200V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
R-1 (Axial)
|
DSK10E-AT1 |
ON SEMICONDUCTOR |
|
Standard
|
400V
|
1A
|
1.1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
10µA @ 400V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
R-1 (Axial)
|
DSK10E-BT |
ON SEMICONDUCTOR |
|
Standard
|
400V
|
1A
|
1.1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
10µA @ 400V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
R-1 (Axial)
|
DSK10E-ET1 |
ON SEMICONDUCTOR |
|
Standard
|
400V
|
1A
|
1.1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
10µA @ 400V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
R-1 (Axial)
|
DLN10C-AT1 |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
1A
|
980mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
-
|
115°C/W Ja
|
150°C (Max)
|
Through Hole
|
R-1 (Axial)
|
DLN10C-BT |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
1A
|
980mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
-
|
115°C/W Ja
|
150°C (Max)
|
Through Hole
|
R-1 (Axial)
|