Standard,Diode Type
R-1 (Axial),Package / Case
12 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
DSK10C ON SEMICONDUCTOR
Standard 200V 1A 1.1V @ 1A Standard Recovery >500ns, > 200mA (Io) - 10µA @ 200V - - 150°C (Max) Through Hole R-1 (Axial)
DSK10E ON SEMICONDUCTOR
Standard 400V 1A 1.1V @ 1A Standard Recovery >500ns, > 200mA (Io) - 10µA @ 400V - - 150°C (Max) Through Hole R-1 (Axial)
DSK10C-AT1 ON SEMICONDUCTOR
Standard 200V 1A 1.1V @ 1A Standard Recovery >500ns, > 200mA (Io) - 10µA @ 200V - - 150°C (Max) Through Hole R-1 (Axial)
DSK10C-BT ON SEMICONDUCTOR
Standard 200V 1A 1.1V @ 1A Standard Recovery >500ns, > 200mA (Io) - 10µA @ 200V - - 150°C (Max) Through Hole R-1 (Axial)
DSK10C-ET1 ON SEMICONDUCTOR
Standard 200V 1A 1.1V @ 1A Standard Recovery >500ns, > 200mA (Io) - 10µA @ 200V - - 150°C (Max) Through Hole R-1 (Axial)
DSK10E-AT1 ON SEMICONDUCTOR
Standard 400V 1A 1.1V @ 1A Standard Recovery >500ns, > 200mA (Io) - 10µA @ 400V - - 150°C (Max) Through Hole R-1 (Axial)
DSK10E-BT ON SEMICONDUCTOR
Standard 400V 1A 1.1V @ 1A Standard Recovery >500ns, > 200mA (Io) - 10µA @ 400V - - 150°C (Max) Through Hole R-1 (Axial)
DSK10E-ET1 ON SEMICONDUCTOR
Standard 400V 1A 1.1V @ 1A Standard Recovery >500ns, > 200mA (Io) - 10µA @ 400V - - 150°C (Max) Through Hole R-1 (Axial)
DLN10C-AT1 ON SEMICONDUCTOR
Standard 200V 1A 980mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 35ns 10µA @ 200V - 115°C/W Ja 150°C (Max) Through Hole R-1 (Axial)
DLN10C-BT ON SEMICONDUCTOR
Standard 200V 1A 980mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 35ns 10µA @ 200V - 115°C/W Ja 150°C (Max) Through Hole R-1 (Axial)