DS2-12A |
IXYS CORP |
|
Standard
|
1200V (1.2kV)
|
3.6A
|
1.25V @ 7A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
2mA @ 1200V
|
-
|
115°C/W Ja
|
-40°C ~ 180°C
|
Through Hole
|
Axial
|
DS2-08A |
IXYS CORP |
|
Standard
|
800V
|
3.6A
|
1.25V @ 7A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
2mA @ 800V
|
-
|
115°C/W Ja
|
-40°C ~ 180°C
|
Through Hole
|
Axial
|
1N4001GL-T |
DIODES INC |
|
Standard
|
50V
|
1A
|
1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
5µA @ 50V
|
8pF @ 4V, 1MHz
|
100°C/W Ja
|
-65°C ~ 175°C
|
Through Hole
|
Axial
|
1N4001L-T |
DIODES INC |
|
Standard
|
50V
|
1A
|
1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
5µA @ 50V
|
15pF @ 4V, 1MHz
|
100°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
Axial
|
UES1302 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
100V
|
6A
|
925mV @ 6A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
5µA @ 100V
|
-
|
20°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
Axial
|
MX1H5615 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
200V
|
-
|
-
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
-
|
-
|
-
|
-
|
Through Hole
|
Axial
|
DSK10B |
ON SEMICONDUCTOR |
|
Standard
|
100V
|
1A
|
1.1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
10µA @ 100V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
Axial
|
DSK10B-AT1 |
ON SEMICONDUCTOR |
|
Standard
|
100V
|
1A
|
1.1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
10µA @ 100V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
Axial
|
DSK10B-BT |
ON SEMICONDUCTOR |
|
Standard
|
100V
|
1A
|
1.1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
10µA @ 100V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
Axial
|
DSA17G |
ON SEMICONDUCTOR |
|
Standard
|
600V
|
1.7A
|
1.05V @ 1.7A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
10µA @ 600V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
Axial
|