Schottky,Diode Type
50ns,Reverse Recovery Time (trr)
4 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
PMEG2020EPA,115 NXP SEMICONDUCTORS
Schottky 20V 2A 420mV @ 2A Fast Recovery =< 500ns, > 200mA (Io) 50ns 1.9mA @ 20V 175pF @ 1V, 1MHz 12°C/W Jl 150°C (Max) Surface Mount 3-UDFN Exposed Pad
PMEG2010EPA,115 NXP SEMICONDUCTORS
Schottky 20V 1A 375mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 50ns 1.9mA @ 20V 175pF @ 1V, 1MHz 12°C/W Jl 150°C (Max) Surface Mount 3-UDFN Exposed Pad
MA2Q70500L PANASONIC CORP
Schottky 30V 1.5A 370mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 50ns 3mA @ 30V 90pF @ 10V, 1MHz - -40°C ~ 125°C Surface Mount DO-214AB
MA2Q73800L PANASONIC CORP
Schottky 40V 1.5A 550mV @ 2A Fast Recovery =< 500ns, > 200mA (Io) 50ns 2mA @ 40V 70pF @ 10V, 1MHz - -40°C ~ 125°C Surface Mount DO-214AB