MBR1080G |
ON SEMICONDUCTOR |
|
Schottky
|
80V
|
10A
|
800mV @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 80V
|
-
|
2°C/W Jc
|
-65°C ~ 175°C
|
Through Hole
|
TO-220-2
|
MS108E3/TR12 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
80V
|
1A
|
810mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 80V
|
-
|
25°C/W Jl
|
-55°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MS108E3/TR8 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
80V
|
1A
|
810mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 80V
|
-
|
25°C/W Jl
|
-55°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MS108/TR12 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
80V
|
1A
|
810mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 80V
|
-
|
25°C/W Jl
|
-55°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MS108/TR8 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
80V
|
1A
|
810mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 80V
|
-
|
25°C/W Jl
|
-55°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
DSB1A60 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
60V
|
1A
|
690mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 80V
|
-
|
220°C/W Ja
|
-
|
Through Hole
|
DO-204AL, DO-41, Axial
|
DSB1A80 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
80V
|
1A
|
690mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 80V
|
-
|
220°C/W Ja
|
-
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MBR1080 |
ON SEMICONDUCTOR |
|
Schottky
|
80V
|
10A
|
800mV @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 80V
|
-
|
2°C/W Jc
|
-65°C ~ 175°C
|
Through Hole
|
TO-220-2
|