8mA @ 20V,Reverse Leakage Current @ Vr
16 parts found
Part Numbers Manufacturer Name Datasheet Diode Configuration Diode Type Reverse DC Voltage(Vr) (Max) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Mounting Type Package / Case
MBR300100CT GENESIC SEMICONDUCTOR INC
- Schottky 100V 300A (DC) 840mV @ 150A Fast Recovery =< 500ns, > 200mA (Io) - 8mA @ 20V Chassis Mount Twin Tower
MBR300100CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 100V 300A (DC) 840mV @ 150A Fast Recovery =< 500ns, > 200mA (Io) - 8mA @ 20V Chassis Mount Twin Tower
MBR30020CT GENESIC SEMICONDUCTOR INC
- Schottky 20V 300A (DC) 650mV @ 150A Fast Recovery =< 500ns, > 200mA (Io) - 8mA @ 20V Chassis Mount Twin Tower
MBR30030CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 30V 300A (DC) 650mV @ 150A Fast Recovery =< 500ns, > 200mA (Io) - 8mA @ 20V Chassis Mount Twin Tower
MBR30035CT GENESIC SEMICONDUCTOR INC
- Schottky 35V 200A (DC) 650mV @ 150A Fast Recovery =< 500ns, > 200mA (Io) - 8mA @ 20V Chassis Mount Twin Tower
MBR30035CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 35V 200A (DC) 650mV @ 150A Fast Recovery =< 500ns, > 200mA (Io) - 8mA @ 20V Chassis Mount Twin Tower
MBR30020CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 20V 300A (DC) 650mV @ 150A Fast Recovery =< 500ns, > 200mA (Io) - 8mA @ 20V Chassis Mount Twin Tower
MBR30030CT GENESIC SEMICONDUCTOR INC
- Schottky 30V 300A (DC) 650mV @ 150A Fast Recovery =< 500ns, > 200mA (Io) - 8mA @ 20V Chassis Mount Twin Tower
MBR30040CT GENESIC SEMICONDUCTOR INC
- Schottky 40V 300A (DC) 650mV @ 150A Fast Recovery =< 500ns, > 200mA (Io) - 8mA @ 20V Chassis Mount Twin Tower
MBR30040CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 40V 300A (DC) 650mV @ 150A Fast Recovery =< 500ns, > 200mA (Io) - 8mA @ 20V Chassis Mount Twin Tower