5mA @ 20V,Reverse Leakage Current @ Vr
50 parts found
Part Numbers Manufacturer Name Datasheet Diode Configuration Diode Type Reverse DC Voltage(Vr) (Max) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Mounting Type Package / Case
MBR400100CT GENESIC SEMICONDUCTOR INC
- Schottky 100V 400A (DC) 840mV @ 200A Fast Recovery =< 500ns, > 200mA (Io) - 5mA @ 20V Chassis Mount Twin Tower
MBR400100CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 100V 400A (DC) 840mV @ 200A Fast Recovery =< 500ns, > 200mA (Io) - 5mA @ 20V Chassis Mount Twin Tower
MBR40040CT GENESIC SEMICONDUCTOR INC
- Schottky 40V 400A (DC) 650mV @ 100A Fast Recovery =< 500ns, > 200mA (Io) - 5mA @ 20V Chassis Mount Twin Tower
MBRH20045 GENESIC SEMICONDUCTOR INC
- Schottky 45V 200A (DC) 650mV @ 200A Fast Recovery =< 500ns, > 200mA (Io) - 5mA @ 20V Chassis Mount D-67
MBRH20045R GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 45V 200A (DC) 650mV @ 200A Fast Recovery =< 500ns, > 200mA (Io) - 5mA @ 20V Chassis Mount D-67
MBR40035CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 35V 400A (DC) 650mV @ 100A Fast Recovery =< 500ns, > 200mA (Io) - 5mA @ 20V Chassis Mount Twin Tower
MBR40035CT GENESIC SEMICONDUCTOR INC
- Schottky 35V 400A (DC) 650mV @ 100A Fast Recovery =< 500ns, > 200mA (Io) - 5mA @ 20V Chassis Mount Twin Tower
MBR20030CT GENESIC SEMICONDUCTOR INC
- Schottky 30V 200A (DC) 650mV @ 100A Fast Recovery =< 500ns, > 200mA (Io) - 5mA @ 20V Chassis Mount Twin Tower
MBR20030CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 30V 200A (DC) 650mV @ 100A Fast Recovery =< 500ns, > 200mA (Io) - 5mA @ 20V Chassis Mount Twin Tower
MBR40040CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 40V 400A (DC) 650mV @ 100A Fast Recovery =< 500ns, > 200mA (Io) - 5mA @ 20V Chassis Mount Twin Tower