110ns,Reverse Recovery Time (trr)
30 parts found
Part Numbers Manufacturer Name Datasheet Diode Configuration Diode Type Reverse DC Voltage(Vr) (Max) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Mounting Type Package / Case
MUR10060CTR GENESIC SEMICONDUCTOR INC
- Standard, Reverse Polarity 600V 100A (DC) 1.7V @ 50A Fast Recovery =< 500ns, > 200mA (Io) 110ns 25µA @ 50V Chassis Mount Twin Tower
FFAF40U60DNTU FAIRCHILD SEMICONDUCTOR CORP
1 Pair Common Cathode Standard 600V 40A 2.1V @ 40A Fast Recovery =< 500ns, > 200mA (Io) 110ns 20µA @ 600V Through Hole, Radial SC-94
FFA40U60DNTU FAIRCHILD SEMICONDUCTOR CORP
1 Pair Common Cathode Standard 600V 40A 2.1V @ 40A Fast Recovery =< 500ns, > 200mA (Io) 110ns 20µA @ 600V Through Hole TO-3P-3, SC-65-3
MURH10060 GENESIC SEMICONDUCTOR INC
- Standard 600V 100A (DC) 1.7V @ 100A Fast Recovery =< 500ns, > 200mA (Io) 110ns 25µA @ 50V Chassis Mount D-67
MURH10060R GENESIC SEMICONDUCTOR INC
- Standard, Reverse Polarity 600V 100A (DC) 1.7V @ 100A Fast Recovery =< 500ns, > 200mA (Io) 110ns 25µA @ 50V Chassis Mount D-67
MUR10060CT GENESIC SEMICONDUCTOR INC
- Standard 600V 100A (DC) 1.7V @ 50A Fast Recovery =< 500ns, > 200mA (Io) 110ns 25µA @ 50V Chassis Mount Twin Tower
MUR20060CT GENESIC SEMICONDUCTOR INC
- Schottky 600V 200A (DC) 1.7V @ 50A Fast Recovery =< 500ns, > 200mA (Io) 110ns 25µA @ 50V Chassis Mount Twin Tower
MUR20060CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 600V 200A (DC) 1.7V @ 50A Fast Recovery =< 500ns, > 200mA (Io) 110ns 25µA @ 50V Chassis Mount Twin Tower
APTDF400U120G MICROSEMI POWER PRODUCTS GROUP
Single Standard 1200V (1.2kV) 450A 2.5V @ 500A Fast Recovery =< 500ns, > 200mA (Io) 110ns 2.5mA @ 1200V Chassis Mount LP4
QRS0620T30 POWEREX INC
Single Standard 600V 97A 2.8V @ 200A Fast Recovery =< 500ns, > 200mA (Io) 110ns 1mA @ 600V Chassis Mount Module