880mV @ 300A, Forward Voltage (Vf)
8 parts found
Part Numbers Manufacturer Name Datasheet Diode Configuration Diode Type Reverse DC Voltage(Vr) (Max) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Mounting Type Package / Case
MBR600100CT GENESIC SEMICONDUCTOR INC
- Schottky 100V 600A (DC) 880mV @ 300A Fast Recovery =< 500ns, > 200mA (Io) - 1mA @ 20V Chassis Mount Twin Tower
MBR600100CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 100V 600A (DC) 880mV @ 300A Fast Recovery =< 500ns, > 200mA (Io) - 1mA @ 20V Chassis Mount Twin Tower
MBRT600100 GENESIC SEMICONDUCTOR INC
- Schottky 100V 600A (DC) 880mV @ 300A Fast Recovery =< 500ns, > 200mA (Io) - 1mA @ 20V Chassis Mount Three Tower
MBRT600100R GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 100V 600A (DC) 880mV @ 300A Fast Recovery =< 500ns, > 200mA (Io) - 1mA @ 20V Chassis Mount Three Tower
MBRT60080 GENESIC SEMICONDUCTOR INC
- Schottky 80V 600A (DC) 880mV @ 300A Fast Recovery =< 500ns, > 200mA (Io) - 1mA @ 20V Chassis Mount Three Tower
MBRT60080R GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 80V 600A (DC) 880mV @ 300A Fast Recovery =< 500ns, > 200mA (Io) - 1mA @ 20V Chassis Mount Three Tower
MBR60080CT GENESIC SEMICONDUCTOR INC
- Schottky 80V 600A (DC) 880mV @ 300A Fast Recovery =< 500ns, > 200mA (Io) - 1mA @ 20V Chassis Mount Twin Tower
MBR60080CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 80V 600A (DC) 880mV @ 300A Fast Recovery =< 500ns, > 200mA (Io) - 1mA @ 20V Chassis Mount Twin Tower