Schottky, Reverse Polarity,Diode Type
3mA @ 20V,Reverse Leakage Current @ Vr
9 parts found
Part Numbers Manufacturer Name Datasheet Diode Configuration Diode Type Reverse DC Voltage(Vr) (Max) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Mounting Type Package / Case
MBR12080CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 80V 120A (DC) 840mV @ 60A Fast Recovery =< 500ns, > 200mA (Io) - 3mA @ 20V Chassis Mount Twin Tower
MBR12040CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 40V 120A (DC) 650mV @ 120A Fast Recovery =< 500ns, > 200mA (Io) - 3mA @ 20V Chassis Mount Twin Tower
MBR12060CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 60V 120A (DC) 750mV @ 60A Fast Recovery =< 500ns, > 200mA (Io) - 3mA @ 20V Chassis Mount Twin Tower
MBR12020CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 20V 120A (DC) 650mV @ 120A Fast Recovery =< 500ns, > 200mA (Io) - 3mA @ 20V Chassis Mount Twin Tower
MBR12030CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 30V 120A (DC) 650mV @ 60A Fast Recovery =< 500ns, > 200mA (Io) - 3mA @ 20V Chassis Mount Twin Tower
MBR12035 CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 35V 120A (DC) 650mV @ 120A Fast Recovery =< 500ns, > 200mA (Io) - 3mA @ 20V Chassis Mount Twin Tower
MBR12045CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 45V 120A (DC) 650mV @ 60A Fast Recovery =< 500ns, > 200mA (Io) - 3mA @ 20V Chassis Mount Twin Tower
MBR120100CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 100V 120A (DC) 840mV @ 60A Fast Recovery =< 500ns, > 200mA (Io) - 3mA @ 20V Chassis Mount Twin Tower
MBR12035CTR GENESIC SEMICONDUCTOR INC
- Schottky, Reverse Polarity 35V 120A (DC) 650mV @ 120A Fast Recovery =< 500ns, > 200mA (Io) - 3mA @ 20V Chassis Mount Twin Tower