200mW,Power - Max
Through Hole,Mounting Type
6 parts found
Part Numbers Manufacturer Name Datasheet Transistor Type Voltage - Collector Emitter Breakdown (Max) Frequency - Transition Noise Figure @ f Gain Power - Max DC Current Gain (hFE) @ Ic, Vce Current - Collector (Ic) (Max) Mounting Type Package / Case
BFY90 MICROSEMI POWER PRODUCTS GROUP
NPN 15V 1.3GHz 2.5dB ~ 5dB @ 500MHz 20dB 200mW 20 @ 25mA, 1V 50mA Through Hole TO-206AF, TO-72-4 Metal Can
2N5031 MICROSEMI POWER PRODUCTS GROUP
NPN 10V 400MHz - 12dB @ 400MHz 200mW 25 @ 1mA, 6V 20mA Through Hole TO-206AF, TO-72-4 Metal Can
2N2857 MICROSEMI POWER PRODUCTS GROUP
NPN 15V 500MHz 4.5dB @ 450MHz 12.5dB ~ 21dB @ 450MHz 200mW 30 @ 3mA, 1V 40mA Through Hole TO-72
MRF904 MICROSEMI POWER PRODUCTS GROUP
NPN 15V 4GHz 1.5dB @ 450MHz 6.5dB ~ 10.5dB 200mW 30 @ 5mA, 5V 30mA Through Hole TO-72
MPS5179 ON SEMICONDUCTOR
NPN 12V 2GHz - - 200mW 25 @ 3mA, 1V 50mA Through Hole TO-226-3, TO-92-3 (TO-226AA)
MPS5179G ON SEMICONDUCTOR
NPN 12V 2GHz - - 200mW 25 @ 3mA, 1V 50mA Through Hole TO-226-3, TO-92-3 (TO-226AA)