NE3513M04-A | CALIFORNIA EASTERN LABS

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Home CALIFORNIA EASTERN LABORATORIES NE3513M04-A

NE3513M04-A

CALIFORNIA EASTERN LABORATORIES

Diodes FETs

IC HJ-FET RF N-CH LNA M04 4SMD

Datasheet

Specification

Transistor Type	N-Channel GaAs HJ-FET
Frequency	12GHz
Gain	13dB
Voltage - Test	2V
Current Rating	60mA
Noise Figure	0.65dB
Current - Test	10mA
Power - Output	125mW
Voltage - Rated	4V
Package / Case	SOT-343F

                        
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