NE3509M04-T2-A | CALIFORNIA EASTERN LABS

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Home CALIFORNIA EASTERN LABORATORIES NE3509M04-T2-A

NE3509M04-T2-A

CALIFORNIA EASTERN LABORATORIES

Diodes FETs

Other transistors

Datasheet

Specification

Transistor Type	HFET
Frequency	2GHz
Gain	17.5dB
Voltage - Test	2V
Current Rating	60mA
Noise Figure	0.4dB
Current - Test	10mA
Power - Output	11dBm
Voltage - Rated	4V
Package / Case	SOT-343F

                        
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