Diodes - FETs,E-pHEMT,10GHz,3V,20mA
Specification
Transistor Type E-pHEMT
Frequency 10GHz
Gain 9dB
Voltage - Test 3V
Current Rating 100mA
Noise Figure 0.81dB
Current - Test 20mA
Power - Output 12dBm
Voltage - Rated 5V
Package / Case 0402 (1005 Metric)