TRANSISTOR NPN BIPOLAR 35MICRO-X
Specification
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 8GHz
Noise Figure @ f 1.3dB ~ 3dB @ 1GHz ~ 4GHz
Gain 10dB ~ 18dB
Power - Max 500mW
DC Current Gain (hFE) @ Ic, Vce 30 @ 10mA, 8V
Current - Collector (Ic) (Max) 60mA
Mounting Type Surface Mount
Package / Case 4-SMD (35 micro-X)