Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.8A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs 15.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) @ Vgs 54nC @ 10V
Input Capacitance (Ciss) @ Vds 3220pF @ 50V
Power - Max 2.1W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA