Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Rds On (Max) @ Id, Vgs 400 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) @ Vds 2000pF @ 100V
Power - Max 28W
Mounting Type Through Hole
Package / Case TO-262-3 Full Pack, I²Pak