Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Rds On (Max) @ Id, Vgs 190 mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 26.4nC @ 10V
Input Capacitance (Ciss) @ Vds 1278pF @ 100V
Power - Max 357W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA