Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 650mA (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs 500 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4.1V @ 250µA
Gate Charge (Qg) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) @ Vds 545pF @ 100V
Power - Max 8.3W
Mounting Type -
Package / Case -