Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs 40 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) @ Vds 2953pF @ 30V
Power - Max 2.16W
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack