Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 199 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.1V @ 250µA
Gate Charge (Qg) @ Vgs 19.8nC @ 10V
Input Capacitance (Ciss) @ Vds 1038pF @ 100V
Power - Max 266W
Mounting Type Through Hole
Package / Case TO-220-3