Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 8A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs 12 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) @ Vgs 100nC @ 10V
Input Capacitance (Ciss) @ Vds 4833pF @ 25V
Power - Max 2.1W
Mounting Type Through Hole
Package / Case TO-220-3