Specification
FET Type 2 N-Channel (Asymmetrical Bridge)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 26A, 35A
Rds On (Max) @ Id, Vgs 20 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) @ Vgs 6.5nC @ 10V
Input Capacitance (Ciss) @ Vds 460pF @ 15V
Power - Max 1.4W
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad