Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs 4.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) @ Vgs 114nC @ 10V
Input Capacitance (Ciss) @ Vds 4550pF @ 10V
Power - Max 6.2W
Mounting Type Surface Mount
Package / Case 8-PowerWDFN