Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs 7.5 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) @ Vds 1440pF @ 15V
Power - Max 4.1W
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad