Specification
FET Type 2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Rds On (Max) @ Id, Vgs 5.7 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) @ Vds 1010pF @ 15V
Power - Max 3.6W, 4.3W
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad