Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta)
Rds On (Max) @ Id, Vgs 90 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 6.1nC @ 4.5V
Input Capacitance (Ciss) @ Vds 540pF @ 10V
Power - Max 1.7W
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead