Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Rds On (Max) @ Id, Vgs 26 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) @ Vds 1120pF @ 15V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead