Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 2A
Rds On (Max) @ Id, Vgs 68 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) @ Vgs 4.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds 415pF @ 6V
Power - Max 2.1W
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad