Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.3A (Ta)
Rds On (Max) @ Id, Vgs 37.5 mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) @ Vds 746pF @ 15V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad