Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Rds On (Max) @ Id, Vgs 11 mOhm @ 8A, 2.5V
Vgs(th) (Max) @ Id 460mV @ 250µA
Gate Charge (Qg) @ Vgs 16nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1645pF @ 4V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad