Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs 24 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) @ Vgs 34nC @ 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 30V
Power - Max 2.5W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA