Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs 37.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 8nC @ 10V
Input Capacitance (Ciss) @ Vds 432pF @ 15V
Power - Max 4.2W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA