Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Rds On (Max) @ Id, Vgs 4.4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) @ Vds 325pF @ 25V
Power - Max 56.8W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA