Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 1.3A (Tc)
Rds On (Max) @ Id, Vgs 9 Ohm @ 650mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) @ Vgs 8nC @ 10V
Input Capacitance (Ciss) @ Vds 160pF @ 25V
Power - Max 45W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA