Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Rds On (Max) @ Id, Vgs 700 mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id 2.9V @ 250µA
Gate Charge (Qg) @ Vgs 6nC @ 10V
Input Capacitance (Ciss) @ Vds 100pF @ 50V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA