Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Rds On (Max) @ Id, Vgs 95 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 4.8nC @ 4.5V
Input Capacitance (Ciss) @ Vds 405pF @ 10V
Power - Max 450mW
Mounting Type Surface Mount
Package / Case 4-XFBGA, WLCSP