Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Rds On (Max) @ Id, Vgs 150 mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA
Gate Charge (Qg) @ Vgs 26.6nC @ 10V
Input Capacitance (Ciss) @ Vds 1312pF @ 100V
Power - Max 357W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB