Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Rds On (Max) @ Id, Vgs 100 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) @ Vgs 6nC @ 4.5V
Input Capacitance (Ciss) @ Vds 620pF @ 10V
Power - Max 630mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363