Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Rds On (Max) @ Id, Vgs 800 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 100pF @ 10V
Power - Max 280mW
Mounting Type Surface Mount
Package / Case SC-89, SOT-490