Transistor: N-MOSFET x2; unipolar; 30V; 9A; 2W; SO
Specification
FET Type 2 N-Channel (Asymmetrical Bridge)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9A, 7.3A
Rds On (Max) @ Id, Vgs 15.8 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) @ Vgs 31nC @ 10V
Input Capacitance (Ciss) @ Vds 1885pF @ 15V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)