Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3A
Rds On (Max) @ Id, Vgs 90 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.6V @ 250µA
Gate Charge (Qg) @ Vgs 9.2nC @ 10V
Input Capacitance (Ciss) @ Vds 450pF @ 30V
Power - Max 1.4W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)